April 14, 2021

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Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures
Author : Giovanni Agostini,Carlo Lamberti
Publisher : Elsevier
Release Date : 2011-08-11
Category : Technology & Engineering
Total pages :496
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In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors

Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures
Author : Giovanni Agostini,Carlo Lamberti
Publisher : Newnes
Release Date : 2013-04-11
Category : Technology & Engineering
Total pages :828
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Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures
Author : S. Sanguinetti,M. Guzzi,E. Gatti,M. Gurioli
Publisher : Elsevier Inc. Chapters
Release Date : 2013-04-11
Category : Science
Total pages :828
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Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures
Author : Lorenzo Rigutti,Maria Tchernycheva
Publisher : Elsevier Inc. Chapters
Release Date : 2013-04-11
Category : Science
Total pages :828
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Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures
Author : Maria Peressi,Alfonso Baldereschi
Publisher : Elsevier Inc. Chapters
Release Date : 2013-04-11
Category : Science
Total pages :828
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Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures
Author : Gema Martinez-Criado,Elisa Borfecchia,Lorenzo Mino,Carlo Lamberti
Publisher : Elsevier Inc. Chapters
Release Date : 2013-04-11
Category : Science
Total pages :828
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Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures
Author : Claudio Ferrari,Elisa Buffagni,Francesca Rossi
Publisher : Elsevier Inc. Chapters
Release Date : 2013-04-11
Category : Science
Total pages :828
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Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures
Author : Daniel Wolverson
Publisher : Elsevier Inc. Chapters
Release Date : 2013-04-11
Category : Science
Total pages :828
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Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures
Author : Andre Stesmans,Valery V. Afanas’ev
Publisher : Elsevier Inc. Chapters
Release Date : 2013-04-11
Category : Science
Total pages :828
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Semiconductor Nanostructures for Optoelectronic Devices

Semiconductor Nanostructures for Optoelectronic Devices
Author : Gyu-Chul Yi
Publisher : Springer Science & Business Media
Release Date : 2012-01-13
Category : Technology & Engineering
Total pages :338
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This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

Basic Semiconductor Physics

Basic Semiconductor Physics
Author : Chihiro Hamaguchi
Publisher : Springer Science & Business Media
Release Date : 2001
Category : Science
Total pages :434
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A detailed description of the basic physics of semiconductors, with the potential to become as successful as the book by Yu and Cardona in this field. The text covers a wide range of important semiconductor phenomena, from the simple to the advanced.

Quantum Dot Heterostructures

Quantum Dot Heterostructures
Author : Dieter Bimberg,Marius Grundmann,Nikolai N. Ledentsov
Publisher : John Wiley & Sons
Release Date : 1999-03-17
Category : Science
Total pages :338
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Quantum Dot Heterostructures Dieter Bimberg, Marius Grundmann and Nikolai N. Ledentsov Institute of Solid State Physics, Technische Universitï¿1⁄2t Berlin, Germany Quantum dots are nanometer-size semiconductor structures, and represent one of the most rapidly developing areas of current semiconductor research as increases in the speed and decreases in the size of semiconductor devices become more important. They present the utmost challenge to semiconductor technology, making possible fascinating novel devices. This important new reference book focuses on the key phenomena and principles. Chapter 1 provides a brief account of the history of quantum dots, whilst the second chapter surveys the various fabrication techniques used in the past two decades, and introduces the concept of self-organized growth. This topic is expanded in the following chapter, which presents a broad review of self-organization phenomena at surfaces of crystals. Experimental results on growth of quantum dot structures in many different systems and on their structural characterization are presented in Chapter 4. Basic properties of the dots relate to their geometric structure and chemical composition. Numerical modeling of the electronic and optical properties of real dots is presented in Chapter 5, together with general theoretical considerations on carrier capture, relaxation, recombination and properties of quantum dot lasers. Chapters 6 and 7 summarize experimental results on electronic, optical and electrical properties. The book concludes by disoussing highly topical results on quantum-dot-based photonic devices - mainly quantum dot lasers. Quantum Dot Heterostructures is written by some of the key researchers who have contributed significantly to the development of the field, and have pioneered both the theoretical understanding of quantum dot related phenomena and quantum dot lasers. It is of great interest to graduate and postgraduate students, and to researchers in semiconductor physics and technology and optoelectronics.

Advances in Semiconductor Nanostructures

Advances in Semiconductor Nanostructures
Author : Alexander V. Latyshev,Anatoliy V. Dvurechenskii,Alexander L. Aseev
Publisher : Elsevier
Release Date : 2016-11-10
Category : Science
Total pages :552
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Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries

Dilute Nitride Semiconductors

Dilute Nitride Semiconductors
Author : Mohamed Henini
Publisher : Elsevier
Release Date : 2004-12-15
Category : Technology & Engineering
Total pages :640
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This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

High-Resolution X-Ray Scattering

High-Resolution X-Ray Scattering
Author : Ullrich Pietsch,Vaclav Holy,Tilo Baumbach
Publisher : Springer Science & Business Media
Release Date : 2004-08-27
Category : Technology & Engineering
Total pages :408
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During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.