January 24, 2021

Download Ebook Free Advances In Non Volatile Memory And Storage Technology

Advances in Non-volatile Memory and Storage Technology

Advances in Non-volatile Memory and Storage Technology
Author : Yoshio Nishi
Publisher : Elsevier
Release Date : 2014-06-24
Category : Computers
Total pages :532
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New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

Nonvolatile Memory Design

Nonvolatile Memory Design
Author : Hai Li,Yiran Chen
Publisher : CRC Press
Release Date : 2017-12-19
Category : Computers
Total pages :203
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The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

Developments in Data Storage

Developments in Data Storage
Author : S. N. Piramanayagam,Tow C. Chong
Publisher : John Wiley & Sons
Release Date : 2011-11-08
Category : Computers
Total pages :331
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A timely text on the recent developments in data storage, from a materials perspective Ever-increasing amounts of data storage on hard disk have been made possible largely due to the immense technological advances in the field of data storage materials. Developments in Data Storage: Materials Perspective covers the recent progress and developments in recording technologies, including the emerging non-volatile memory, which could potentially become storage technologies of the future. Featuring contributions from experts around the globe, this book provides engineers and graduate students in materials science and electrical engineering a solid foundation for grasping the subject. The book begins with the basics of magnetism and recording technology, setting the stage for the following chapters on existing methods and related research topics. These chapters focus on perpendicular recording media to underscore the current trend of hard disk media; read sensors, with descriptions of their fundamental principles and challenges; and write head, which addresses the advanced concepts for writing data in magnetic recording. Two chapters are devoted to the highly challenging area in hard disk drives of tribology, which deals with reliability, corrosion, and wear-resistance of the head and media. Next, the book provides an overview of the emerging technologies, such as heat-assisted magnetic recording and bit-patterned media recording. Non-volatile memory has emerged as a promising alternative storage option for certain device applications; two chapters are dedicated to non-volatile memory technologies such as the phase-change and the magnetic random access memories. With a strong focus on the fundamentals along with an overview of research topics, Developments in Data Storage is an ideal reference for graduate students or beginners in the field of magnetic recording. It also serves as an invaluable reference for future storage technologies including non-volatile memories.

Nanocrystals in Nonvolatile Memory

Nanocrystals in Nonvolatile Memory
Author : Writam Banerjee
Publisher : CRC Press
Release Date : 2018-10-09
Category : Science
Total pages :534
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In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving element that have brought the nonvolatile flash memory technology to a distinguished height. However, new approaches are still required to strengthen this technology for future applications. This book details the methods of fabrication of nanocrystals and their application in baseline nonvolatile memory and emerging nonvolatile memory technologies. The chapters have been written by renowned experts of the field and will provide an in-depth understanding of these technologies. The book is a valuable tool for research and development sectors associated with electronics, semiconductors, nanotechnology, material sciences, solid state memories, and electronic devices.

Logic Non-volatile Memory: The Nvm Solutions For Ememory

Logic Non-volatile Memory: The Nvm Solutions For Ememory
Author : Hsu Charles Ching-hsiang,Lin Yuan-tai
Publisher : World Scientific
Release Date : 2014-03-18
Category : Technology & Engineering
Total pages :316
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Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance?This book is written to help you.It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book.This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits.All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.

Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing

Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing
Author : Su-Ting Han,Ye Zhou
Publisher : Woodhead Publishing
Release Date : 2020-05-26
Category : Technology & Engineering
Total pages :352
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Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies. This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices. Reviews the most promising materials to enable emerging computing memory and data storage devices, including one- and two-dimensional materials, metal oxides, semiconductors, organic materials, and more Discusses fundamental mechanisms and design strategies for two- and three-terminal device structures Addresses device challenges and strategies to enable translation of optical and optoelectronic technologies

Rad-hard Semiconductor Memories

Rad-hard Semiconductor Memories
Author : Calligaro, Cristiano,Gatti, Umberto
Publisher : River Publishers
Release Date : 2019-01-30
Category : Technology & Engineering
Total pages :418
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Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes. In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects). After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include: Radiation effects on semiconductor components (TID, SEE)Radiation Hardening by Design (RHBD) TechniquesRad-hard SRAMsRad-hard PROMsRad-hard Flash NVMsRad-hard ReRAMsRad-hard emerging technologies

Emerging Memory Technologies

Emerging Memory Technologies
Author : Yuan Xie
Publisher : Springer Science & Business Media
Release Date : 2013-10-21
Category : Technology & Engineering
Total pages :322
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This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.

Phase Change Memory

Phase Change Memory
Author : Moinuddin K. Qureshi,Sudhanva Gurumurthi,Bipin Rajendran
Publisher : Morgan & Claypool Publishers
Release Date : 2011-11-01
Category : Computers
Total pages :120
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This book will educate readers on the theory and application of Phase-Change Memory (aka, PRAM, PCME, PCRAM, C-RAM, Chalcogenide RAM, and Ovonic Unified Memory). This non-volatile computer memory is a major competitor with the ubiquitous flash memory, which suffers from a number of practical problems that the newer Phase-Change Memory hopes to eradicate. This book is appropriate for professional researchers, graduate students, and advanced undergraduates.

Resistive Switching

Resistive Switching
Author : Daniele Ielmini,Rainer Waser
Publisher : John Wiley & Sons
Release Date : 2015-12-28
Category : Technology & Engineering
Total pages :784
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With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

Advances in Optical Science and Engineering

Advances in Optical Science and Engineering
Author : Vasudevan Lakshminarayanan,Indrani Bhattacharya
Publisher : Springer
Release Date : 2015-06-02
Category : Technology & Engineering
Total pages :644
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The Proceedings of First International Conference on Opto-Electronics and Applied Optics 2014, IEM OPTRONIX 2014 presents the research contributions presented in the conference by researchers from both India and abroad. Contributions from established scientists as well as students are included. The book is organized to enable easy access to various topics of interest. The first part includes the Keynote addresses by Phillip Russell, Max Planck Institute of the Light Sciences, Erlangen, Germany and Lorenzo Pavesi, University of Trento, Italy. The second part focuses on the Plenary Talks given by eminent scientists, namely, Azizur Rahman, City University London, London; Bishnu Pal, President, The Optical Society of India; Kamakhya Ghatak, National Institute of Technology, Agartala; Kehar Singh, Former Professor, India Institute of Technology Delhi; Mourad Zghal, SUPCOM, University of Carthage, Tunisia; Partha Roy Chaudhuri, IIT Kharagpur; S K. Bhadra, CSIR-Central Glass and Ceramic Research Institute, Kolkata; Sanjib Chatterjee, Raja Ramanna Centre for Advanced Technology, Indore; Takeo Sasaki, Tokyo University, Japan; Lakshminarayan Hazra, Emeritus Professor, University of Calcutta, Kolkata; Shyam Akashe, ITM University, Gwalior and Vasudevan Lakshminarayanan, University of Waterloo, Canada. The subsequent parts focus on topic-wise contributory papers in Application of Solar Energy; Diffraction Tomography; E.M. Radiation Theory and Antenna; Fibre Optics and Devices; Photonics for Space Applications; Micro-Electronics and VLSI; Nano-Photonics, Bio-Photonics and Bio-Medical Optics; Non-linear Phenomena and Chaos; Optical and Digital Data and Image Processing; Optical Communications and Networks; Optical Design; Opto-Electronic Devices; Opto-Electronic Materials and Quantum Optics and Information Processing.

Advances in Information Recording

Advances in Information Recording
Author : Paul H. Siegel
Publisher : American Mathematical Soc.
Release Date : 2021
Category : Mathematics
Total pages :165
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Modulation coding for a two-dimensional optical storage channel by W. M. J. Coene and A. H. J. Immink Characterization of heat-assisted magnetic recording channels by R. Radhakrishnan, B. Vasic, F. Erden, and C. He Cramer-Rao bound for timing recovery on channels with inter-symbol interference by A. R. Nayak, J. R. Barry, and S. W. McLaughlin Macro-molecular data storage with petabyte/cm$^3$ density, highly parallel read/write operations, and genuine 3D storage capability by M. Mansuripur and P. Khulbe Can we explain the faithful communication of genetic information? by G. Battail Data storage and processing in cells: An information theoretic approach by O. Milenkovic Ghostbusting: Coding for optical communications by N. Kashyap and P. H. Siegel

Memory Mass Storage

Memory Mass Storage
Author : Giovanni Campardo,Federico Tiziani,Massimo Iaculo
Publisher : Springer Science & Business Media
Release Date : 2011-02-04
Category : Technology & Engineering
Total pages :479
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Memory Mass Storage describes the fundamental storage technologies, like Semiconductor, Magnetic, Optical and Uncommon, detailing the main technical characteristics of the storage devices. It deals not only with semiconductor and hard disk memory, but also with different ways to manufacture and assembly them, and with their application to meet market requirements. It also provides an introduction to the epistemological issues arising in defining the process of remembering, as well as an overview on human memory, and an interesting excursus about biological memories and their organization, to better understand how the best memory we have, our brain, is able to imagine and design memory.

Non-Volatile Memory Database Management Systems

Non-Volatile Memory Database Management Systems
Author : Joy Arulraj,Andrew Pavlo
Publisher : Morgan & Claypool Publishers
Release Date : 2019-02-12
Category : Computers
Total pages :191
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This book explores the implications of non-volatile memory (NVM) for database management systems (DBMSs). The advent of NVM will fundamentally change the dichotomy between volatile memory and durable storage in DBMSs. These new NVM devices are almost as fast as volatile memory, but all writes to them are persistent even after power loss. Existing DBMSs are unable to take full advantage of this technology because their internal architectures are predicated on the assumption that memory is volatile. With NVM, many of the components of legacy DBMSs are unnecessary and will degrade the performance of data-intensive applications. We present the design and implementation of DBMS architectures that are explicitly tailored for NVM. The book focuses on three aspects of a DBMS: (1) logging and recovery, (2) storage and buffer management, and (3) indexing. First, we present a logging and recovery protocol that enables the DBMS to support near-instantaneous recovery. Second, we propose a storage engine architecture and buffer management policy that leverages the durability and byte-addressability properties of NVM to reduce data duplication and data migration. Third, the book presents the design of a range index tailored for NVM that is latch-free yet simple to implement. All together, the work described in this book illustrates that rethinking the fundamental algorithms and data structures employed in a DBMS for NVM improves performance and availability, reduces operational cost, and simplifies software development.

Emerging Non-Volatile Memories

Emerging Non-Volatile Memories
Author : Seungbum Hong,Orlando Auciello,Dirk Wouters
Publisher : Springer
Release Date : 2014-11-18
Category : Technology & Engineering
Total pages :273
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This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.