January 24, 2021

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Resistive Switching in Pt, TiO2, Pt

Resistive Switching in Pt, TiO2, Pt
Author : Doo Seok Jeong
Publisher : Forschungszentrum Jülich
Release Date : 2009
Category :
Total pages :133
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Investigation of Resistive Switching in Barium Strontium Titanate Thin Films for Memory Applications

Investigation of Resistive Switching in Barium Strontium Titanate Thin Films for Memory Applications
Author : Wan Shen
Publisher : Forschungszentrum Jülich
Release Date : 2010
Category :
Total pages :114
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Integration of Resistive Switching Devices in Crossbar Structures

Integration of Resistive Switching Devices in Crossbar Structures
Author : Christian Nauenheim
Publisher : Forschungszentrum Jülich
Release Date : 2010
Category :
Total pages :142
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Resistive Switching in TiO2 Thin Films

Resistive Switching in TiO2 Thin Films
Author : Lin Yang
Publisher : Forschungszentrum Jülich
Release Date : 2011
Category :
Total pages :117
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Resistive Switching

Resistive Switching
Author : Daniele Ielmini,Rainer Waser
Publisher : John Wiley & Sons
Release Date : 2015-12-28
Category : Technology & Engineering
Total pages :784
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With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

Resistive switching phenomena of extended defects in Nb-doped SrTiO3 under influence of external gradients

Resistive switching phenomena of extended defects in Nb-doped SrTiO3 under influence of external gradients
Author : Christian Rodenbücher
Publisher : Forschungszentrum Jülich
Release Date : 2014
Category :
Total pages :200
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Micro-spectroscopic investigation of valence change processes in resistive switching SrTiO3 thin films

Micro-spectroscopic investigation of valence change processes in resistive switching SrTiO3 thin films
Author : Annemarie Köhl
Publisher : Forschungszentrum Jülich
Release Date : 2014
Category :
Total pages :166
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Resistive switching in ZrO2 based metal-oxide-metal structures

Resistive switching in ZrO2 based metal-oxide-metal structures
Author : Irina Kärkkänen
Publisher : Forschungszentrum Jülich
Release Date : 2014
Category :
Total pages :125
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Understanding of NiO-based Unipolar Resistive Switching from First Principle Simulations to Macroscopic Models

Understanding of NiO-based Unipolar Resistive Switching from First Principle Simulations to Macroscopic Models
Author : Anonim
Publisher : Stanford University
Release Date : 2011
Category :
Total pages :129
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As NAND Flash memory technology is facing challenging issues such as electronic coupling between adjacent cells and high coupling of the control gate with floating gate in scaling down to and beyond 16nm technology node, new functional devices or materials has been explored to continue consecutive development of memory technology beyond 16nm technology node. One of the new emerging non-volatile memories is resistance change random access memory(ReRAM) possibly meeting the requirements to replace NAND Flash; i.e., low cost, simple structure, promising 8nm technology node, low power dissipation, high endurance, possible integration in crossbar arrays in 3D on top of silicon base CMOS ICs. In ReRAM, understanding the switching mechanism was very complicated because there have been many different phenomena co-existing under circumstances when ultimate electrical stress is applied. One of them, oxidation/reduction of transition metals is generally accepted to results in the unipolar switching. In this switching mode, both thermal and chemical processes are associated with the effect of electric field. For clearer understanding of mechanism of the unipolar switching, defect states in NiO are investigated, which is closely related to electrical conductivity of the transition metal-based resistive switching materials. Study on feasible "ON" and "OFF" states in atomic scale gave an insight into atomic structure of conductive filament, role of oxygen (or oxygen vacancies) and its migration. With these first principle modeling results, a quantitative model for reset/retention and filament formation was proposed. Experimental results for reduction of reset current and long retention time of RON by inserting interfacial layer between a metal electrode and resistive switching material can be explained based on the quantitative model.

Multilevel Resistive Switching in Ag/SiO2/Pt Resistive Switching Memory Device

Multilevel Resistive Switching in Ag/SiO2/Pt Resistive Switching Memory Device
Author : Anonim
Publisher : Unknown
Release Date : 2015
Category :
Total pages :129
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Abstract: Ag/SiO2 /Pt-based resistive random access memory (RRAM) devices were fabricated and studied. A multilevel resistive switching (RS) characteristic was observed in the Ag/SiO2 /Pt-based RRAM devices. Four different resistive states were obtained under both the direct current (DC) sweep mode and the pulse voltage mode. Good endurance and retention characteristics of the Ag/SiO2 /Pt RRAM device with multilevel resistance states were demonstrated. The mechanism of multilevel RS was discussed and a multiple-conductive-filament model was used to explain the multilevel RS phenomenon in the Ag/SiO2 /Pt-based RRAM devices.

Resistance Switching Mechanism in TiO2

Resistance Switching Mechanism in TiO2
Author : Anonim
Publisher : Stanford University
Release Date : 2011
Category :
Total pages :129
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Resistive Random Access Memory (ReRAM) has attracted significant attention recently, as it is now considered as the promising candidate for the next generation of non-volatile memory device, due to its high density, low operating power, fast switching speed, and compatibility with conventional CMOS process. Among many resistance switching materials, TiO2 has been widely studied. However, the most challenging issue is that the underlying switching mechanism is lacking in-depth understanding. It has been proposed that the resistance switching is strongly coupled with the presence and a preferential distribution of oxygen vacancies involving the formation of a conductive filament. Although many experiments have been done to address the switching mechanism during the last decade, it is hard to figure out what happens at microscopic level. Therefore, systematic interpretation about the microscopic details of the role of oxygen vacancies in the formation of a conductive filament is essential. To address the conduction and the resistance switching mechanism, the effect of oxygen vacancies on the electronic structures in TiO2 has been investigated using first principles calculations based on density functional theory. In this dissertation, we report "ON"-state (Low Resistance State) conduction mechanism of rutile TiO2 including oxygen vacancies, and then the transition from "ON" to "OFF"-state (High Resistance State) is investigated. Although it is known that TiO2 exhibits n-type semiconducting property with extra electrons generated by the formation of oxygen vacancies, "ON" and "OFF"-state conductivity during resistance switching cannot be explained by isolated single oxygen vacancy. We calculated electronic characteristics such as density of states, electron localization function, band decomposed charge density distribution, and energy band structure, and show the influence of oxygen vacancy configurations on these properties and on the resistance change. Oxygen vacancy ordering and diffusion of either oxygen vacancy or hydrogen impurities have a significant impact on both the formation of the conductive filament and the transition from "ON" to "OFF"-state. Results from this study indicate that the "ON"-state conduction and resistance switching model that can be ascribed to the formation and rupture of conductive filament consisting of oxygen vacancy-ordered structure.

Evidence for Multifilamentary Valence Changes in Resistive Switching SrTiO3 Devices Detected by Transmission X-ray Microscopy

Evidence for Multifilamentary Valence Changes in Resistive Switching SrTiO3 Devices Detected by Transmission X-ray Microscopy
Author : A. Köhl,H. Wasmund,A. Herpers,P. Guttmann,S. Werner,K. Henzler,H. Du,Joachim Mayer,Rainer Waser,R. Dittmann
Publisher : Unknown
Release Date : 2013
Category :
Total pages :129
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Unipolar Resistive Switching Behavior of Amorphous SrMoO4 Thin Films Deposited at Room Temperature

Unipolar Resistive Switching Behavior of Amorphous SrMoO4 Thin Films Deposited at Room Temperature
Author : Anonim
Publisher : Unknown
Release Date : 2017
Category :
Total pages :129
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Abstract: Amorphous SrMoO4 (SMO) thin films were deposited on Pt/Ti/SiO2 /Si substrates at room temperature by pulsed laser deposition and the resistive switching (RS) behavior of the Au/SMO/Pt devices was investigated. The Au/SMO/Pt devices exhibit typical unipolar RS behavior with excellent switching parameters as follows: high resistance ratio (~10 5 ) between the low resistance state (LRS) and high resistance state (HRS), non-overlapping switching voltages, and good endurance and retention characteristics. Detailed analysis of their current-voltage characteristics reveals that the conduction mechanisms are Ohmic conduction in the LRS and lower voltage region of HRS, and Poole-Frenkel emission in the higher voltage region of the HRS. Temperature dependent resistance measurements, combined with x-ray photoelectron spectroscopy and model analysis indicate that the unipolar RS behavior of the Au/SMO/Pt devices could be understood by a conical conducting filaments (CFs) model in which the conical CFs are composed of oxygen vacancies. The conical CFs extend from the cathode to anode during the forming process and the observed RS behavior occurs in the localized region near the anode. These results suggest that the room-temperature- deposited amorphous SMO thin films could find potential application in nonvolatile RS memory.

Emerging Nanoelectronic Devices

Emerging Nanoelectronic Devices
Author : An Chen,James Hutchby,Victor Zhirnov,George Bourianoff
Publisher : John Wiley & Sons
Release Date : 2015-01-27
Category : Technology & Engineering
Total pages :576
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Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. Suggests guidelines for the directions of future development of each technology. Emphasizes physical concepts over mathematical development. Provides an essential resource for students, researchers and practicing engineers.

Istc/cstic 2009 (cistc)

Istc/cstic 2009 (cistc)
Author : David Huang
Publisher : The Electrochemical Society
Release Date : 2009-03
Category : Semiconductors
Total pages :1094
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ISTC/CSTIC is an annual semiconductor technology conference covering all the aspects of semiconductor technology and manufacturing, including devices, design, lithography, integration, materials, processes, manufacturing as well as emerging semiconductor technologies and silicon material applications. ISTC/CSTIC 2009 was merged by ISTC (International Semiconductor Technology Conference) and CSTIC (China Semiconductor Technology International Conference), the two industry leading technical conferences in China, and consisted of one plenary session and nine technical symposia. This issue of ECS Transactions contains 159 papers from the conference.