April 13, 2021

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Germanium-Based Technologies

Germanium-Based Technologies
Author : Cor Claeys,Eddy Simoen
Publisher : Elsevier
Release Date : 2011-07-28
Category : Science
Total pages :480
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Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. State-of-the-art information available for the first time as an all-in-source Extensive reference list making it an indispensable reference book Broad coverage from fundamental aspects up to industrial applications

Metal Impurities in Silicon- and Germanium-Based Technologies

Metal Impurities in Silicon- and Germanium-Based Technologies
Author : Cor Claeys,Eddy Simoen
Publisher : Springer
Release Date : 2018-08-13
Category : Technology & Engineering
Total pages :438
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This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

SiGe and Ge

SiGe and Ge
Author : David Louis Harame
Publisher : The Electrochemical Society
Release Date : 2006-01-01
Category : Electronic apparatus and appliances
Total pages :1248
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The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

Extended Defects in Germanium

Extended Defects in Germanium
Author : Cor Claeys,Eddy Simoen
Publisher : Springer Science & Business Media
Release Date : 2008-12-29
Category : Technology & Engineering
Total pages :300
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The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.

Minerals Yearbook

Minerals Yearbook
Author : Anonim
Publisher : Unknown
Release Date : 2010
Category : Mineral industries
Total pages :129
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Congressional Serial Set

Congressional Serial Set
Author : Anonim
Publisher : Unknown
Release Date : 1989
Category : United States
Total pages :129
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Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology

Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology
Author : Dietmar Kissinger
Publisher : Springer Science & Business Media
Release Date : 2012-03-09
Category : Technology & Engineering
Total pages :111
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The book presents the analysis and design of integrated automotive radar receivers in Silicon-Germanium technology, for use in complex multi-channel radar transceiver front-ends in the 77GHz frequency band. The main emphasis of the work is the realization of high-linearity and low-power modular receiver channels as well as the investigation of millimeter-wave integrated test concepts for the receiver front-end.

Growth of Germanium Crystals by Reacting Gold with Germane and Selective Gold Removal

Growth of Germanium Crystals by Reacting Gold with Germane and Selective Gold Removal
Author : Joshua Bryce Ratchford
Publisher : Unknown
Release Date : 2008
Category :
Total pages :204
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SiGe Based Technologies

SiGe Based Technologies
Author : Y. Shiraki,T.P. Pearsall,E. Kasper
Publisher : Elsevier
Release Date : 1993-02-18
Category : Technology & Engineering
Total pages :289
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The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.

Radiation Effects in Advanced Semiconductor Materials and Devices

Radiation Effects in Advanced Semiconductor Materials and Devices
Author : C. Claeys,Eddy Simoen
Publisher : Springer Science & Business Media
Release Date : 2002-08-21
Category : Business & Economics
Total pages :401
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As microprocessors shrink in size, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on an increasing number of processing steps that involve a perilous environment where inadvertent radiation damage can occur. This book is aimed at researchers seeking an overview of the field and nuclear, space, and process engineers. Background knowledge of semiconductor and device physics is assumed, but the basic concepts are all concisely summarized.

Noise and Fluctuations

Noise and Fluctuations
Author : Massimo Macucci,Giovanni Basso
Publisher : American Institute of Physics
Release Date : 2009-05-13
Category : Science
Total pages :684
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The ICNF conference is a biennial event that brings together researchers interested in theoretical and experimental aspects of fluctuations across a wide spectrum of scientific and technological fields, ranging from heartbeat analysis to mesoscopic phsyics, to noise optimization of electron devices, to the variations of stock prices.

High Mobility and Quantum Well Transistors

High Mobility and Quantum Well Transistors
Author : Geert Hellings,Kristin De Meyer
Publisher : Springer Science & Business Media
Release Date : 2013-03-25
Category : Technology & Engineering
Total pages :140
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For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.

Current Trends in Heterojunction Bipolar Transistors

Current Trends in Heterojunction Bipolar Transistors
Author : M. F. Chang
Publisher : World Scientific
Release Date : 1996
Category : Technology & Engineering
Total pages :421
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Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.

Technology for Future NASA Missions

Technology for Future NASA Missions
Author : Anonim
Publisher : Unknown
Release Date : 1988
Category : Astronautics
Total pages :568
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The Technology for Future NASA Missions conference was held during the period September 12-13, 1988 at the Capital Hilton in Washington, DC. The conference provided industry and university executives programmatic and technical information on OAST space technology efforts. The conference was jointly sponsored by the American Institute of Aeronautics and Astronautics and the National Aeronautics and Space Administration. First day proceedings were devoted to programmatic discussions of CSTI, Pathfinder, and the Research and Technology Base program. Second day activities included the coverage of technical efforts on a more detailed basis.

Kirk-Othmer Encyclopedia of Chemical Technology, Volume 12

Kirk-Othmer Encyclopedia of Chemical Technology, Volume 12
Author : Kirk-Othmer
Publisher : Wiley-Interscience
Release Date : 2005
Category : Science
Total pages :872
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The fifth edition of the Kirk-Othmer Encyclopedia of Chemical Technology builds upon the solid foundation of the previous editions, which have proven to be a mainstay for chemists, biochemists, and engineers at academic, industrial, and government institutions since publication of the first edition in 1949. * Over 1000 articles in 27 volumes * More than 600 new or updated articles