November 30, 2020

Download Ebook Free Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy
Author : Valeri V. Afanas'ev
Publisher : Elsevier
Release Date : 2014-02-22
Category : Science
Total pages :404
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The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. First complete model description of the internal photoemission phenomena Overview of the most reliable energy barrier determination procedures and trap characterization methods Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals

Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy
Author : Valeri V. Afanas'ev
Publisher : Elsevier
Release Date : 2010-07-07
Category : Science
Total pages :312
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The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several “hot topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented. - First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements - Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers - Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces - Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors

Hard X-ray Photoelectron Spectroscopy (HAXPES)

Hard X-ray Photoelectron Spectroscopy (HAXPES)
Author : Joseph Woicik
Publisher : Springer
Release Date : 2015-12-26
Category : Science
Total pages :571
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This book provides the first complete and up-to-date summary of the state of the art in HAXPES and motivates readers to harness its powerful capabilities in their own research. The chapters are written by experts. They include historical work, modern instrumentation, theory and applications. This book spans from physics to chemistry and materials science and engineering. In consideration of the rapid development of the technique, several chapters include highlights illustrating future opportunities as well.

Advanced Gate Stacks for High-Mobility Semiconductors

Advanced Gate Stacks for High-Mobility Semiconductors
Author : Athanasios Dimoulas,Evgeni Gusev,Paul C. McIntyre,Marc Heyns
Publisher : Springer Science & Business Media
Release Date : 2008-01-01
Category : Technology & Engineering
Total pages :384
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This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.

Photoelectron Spectroscopy

Photoelectron Spectroscopy
Author : Stephan Hüfner
Publisher : Springer Science & Business Media
Release Date : 2013-03-09
Category : Science
Total pages :662
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The author, S. Hüfner, presents an authoritative and up-to-date introduction to the field by comprehensively treating the electronic structures of atoms, molecules, solids, and surfaces. Brief descriptions are given of inverse photoemission, spin-polarized photoemission and photoelectron diffraction. Experimental aspects are considered throughout the third edition book and the results are carefully interpreted in terms of the theory. A wealth of measured data is presented in tabulator form for easy use by experimentalists. The reader will learn about the basic technique of photoemission spectroscopy and obtain the necessary background for work based on this book.

Metrology and Diagnostic Techniques for Nanoelectronics

Metrology and Diagnostic Techniques for Nanoelectronics
Author : Zhiyong Ma,David G. Seiler
Publisher : CRC Press
Release Date : 2017-03-27
Category : Science
Total pages :1454
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Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.

Transparent Conductive Zinc Oxide

Transparent Conductive Zinc Oxide
Author : Klaus Ellmer,Andreas Klein,Bernd Rech
Publisher : Springer Science & Business Media
Release Date : 2007-12-29
Category : Technology & Engineering
Total pages :446
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Zinc oxide (ZnO) belongs to the class of transparent conducting oxides that can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review.

Quantitative Core Level Photoelectron Spectroscopy

Quantitative Core Level Photoelectron Spectroscopy
Author : Juan A Colón Santana
Publisher : Morgan & Claypool Publishers
Release Date : 2016-01-01
Category : Technology & Engineering
Total pages :109
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Photoemission (also known as photoelectron) spectroscopy refers to the process in which an electron is removed from a specimen after the atomic absorption of a photon. The first evidence of this phenomenon dates back to 1887 but it was not until 1905 that Einstein offered an explanation of this effect, which is now referred to as ""the photoelectric effect"". Quantitative Core Level Photoelectron Spectroscopy: A Primer tackles the pragmatic aspects of the photoemission process with the aim of introducing the reader to the concepts and instrumentation that emerge from an experimental approach. The basic elements implemented for the technique are discussed and the geometry of the instrumentation is explained. The book covers each of the features that have been observed in the X-ray photoemission spectra and provides the tools necessary for their understanding and correct identification. Charging effects are covered in the penultimate chapter with the final chapter bringing closure to the basic uses of the X-ray photoemission process, as well as guiding the reader through some of the most popular applications used in current research.

Photoelectron Spectroscopy

Photoelectron Spectroscopy
Author : J. H. D. Eland
Publisher : Elsevier
Release Date : 2013-10-22
Category : Science
Total pages :286
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Photoelectron Spectroscopy: An Introduction to Ultraviolet Photoelectronspectroscopy in the Gas Phase, Second Edition Photoelectron Spectroscopy: An Introduction to Ultraviolet PhotoelectronSpectroscopy in the Gas Phase, Second Edition aims to give practical approach on the subject of photoelectron spectroscopy, as well as provide knowledge on the interpretation of the photoelectron spectrum. The book covers topics such as the principles and literature of photoelectron microscopy; the main features and analysis of photoelectron spectra; ionization techniques; and energies from the photoelectron spectra. Also covered in the book are topics suc as photoelectron band structure and the applications of photoelectron spectroscopy in chemistry. The text is recommended for students and practitioners of chemistry who would like to be familiarized with the concepts of photoelectron spectroscopy and its importance in the field.

Electronic Properties of Semiconductor Interfaces

Electronic Properties of Semiconductor Interfaces
Author : Winfried M?nch
Publisher : Springer Science & Business Media
Release Date : 2004-01-14
Category : Technology & Engineering
Total pages :263
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Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as the unifying concept, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

X-ray Photoelectron Spectroscopy

X-ray Photoelectron Spectroscopy
Author : Paul van der Heide
Publisher : John Wiley & Sons
Release Date : 2011-11-01
Category : Science
Total pages :264
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This book introduces readers interested in the field of X-rayPhotoelectron Spectroscopy (XPS) to the practical concepts in thisfield. The book first introduces the reader to the language andconcepts used in this field and then demonstrates how theseconcepts are applied. Including how the spectra are produced,factors that can influence the spectra (all initial and final stateeffects are discussed), how to derive speciation, volume analysedand how one controls this (includes depth profiling), andquantification along with background substraction and curve fittingmethodologies. This is presented in a concise yet comprehensive manner and eachsection is prepared such that they can be read independently ofeach other, and all equations are presented using the most commonlyused units. Greater emphasis has been placed on spectralunderstanding/interpretation. For completeness sake, a descriptionof commonly used instrumentation is also presented. Finally, somecomplementary surface analytical techniques and associated conceptsare reviewed for comparative purposes in stand-alone appendixsections.

Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing

Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing
Author : D. Misra
Publisher : The Electrochemical Society
Release Date : 2008-01-01
Category : Dielectrics
Total pages :405
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This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectronics have reached below 100 nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy sources, and various types of sensing devices. As long as one or more of these functional devices is in 1-100 nm dimensions, the resultant system can be defined as nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addition to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.

Defects in Optoelectronic Materials

Defects in Optoelectronic Materials
Author : Kazumi Wada
Publisher : CRC Press
Release Date : 2001-11-06
Category : Science
Total pages :379
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Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.

An Introduction to Surface Analysis by XPS and AES

An Introduction to Surface Analysis by XPS and AES
Author : John F. Watts,John Wolstenholme
Publisher : John Wiley & Sons
Release Date : 2019-08-27
Category : Technology & Engineering
Total pages :288
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Provides a concise yet comprehensive introduction to XPS and AES techniques in surface analysis This accessible second edition of the bestselling book, An Introduction to Surface Analysis by XPS and AES, 2nd Edition explores the basic principles and applications of X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) techniques. It starts with an examination of the basic concepts of electron spectroscopy and electron spectrometer design, followed by a qualitative and quantitative interpretation of the electron spectrum. Chapters examine recent innovations in instrument design and key applications in metallurgy, biomaterials, and electronics. Practical and concise, it includes compositional depth profiling; multi-technique analysis; and everything about samples—including their handling, preparation, stability, and more. Topics discussed in more depth include peak fitting, energy loss background analysis, multi-technique analysis, and multi-technique profiling. The book finishes with chapters on applications of electron spectroscopy in materials science and the comparison of XPS and AES with other analytical techniques. Extensively revised and updated with new material on NAPXPS, twin anode monochromators, gas cluster ion sources, valence band spectra, hydrogen detection, and quantification Explores key spectroscopic techniques in surface analysis Provides descriptions of latest instruments and techniques Includes a detailed glossary of key surface analysis terms Features an extensive bibliography of key references and additional reading Uses a non-theoretical style to appeal to industrial surface analysis sectors An Introduction to Surface Analysis by XPS and AES, 2nd Edition is an excellent introductory text for undergraduates, first-year postgraduates, and industrial users of XPS and AES.

JJAP

JJAP
Author : Anonim
Publisher : Unknown
Release Date : 2008
Category : Physics
Total pages :129
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