April 13, 2021

Download Ebook Free Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy
Author : Valeri V. Afanas'ev
Publisher : Elsevier
Release Date : 2010-07-07
Category : Science
Total pages :312
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The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several “hot topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented. - First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements - Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers - Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces - Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors

Hard X-ray Photoelectron Spectroscopy (HAXPES)

Hard X-ray Photoelectron Spectroscopy (HAXPES)
Author : Joseph Woicik
Publisher : Springer
Release Date : 2015-12-26
Category : Science
Total pages :571
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This book provides the first complete and up-to-date summary of the state of the art in HAXPES and motivates readers to harness its powerful capabilities in their own research. The chapters are written by experts. They include historical work, modern instrumentation, theory and applications. This book spans from physics to chemistry and materials science and engineering. In consideration of the rapid development of the technique, several chapters include highlights illustrating future opportunities as well.

Advanced Gate Stacks for High-Mobility Semiconductors

Advanced Gate Stacks for High-Mobility Semiconductors
Author : Athanasios Dimoulas,Evgeni Gusev,Paul C. McIntyre,Marc Heyns
Publisher : Springer Science & Business Media
Release Date : 2008-01-01
Category : Technology & Engineering
Total pages :384
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This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.

Metrology and Diagnostic Techniques for Nanoelectronics

Metrology and Diagnostic Techniques for Nanoelectronics
Author : Zhiyong Ma,David G. Seiler
Publisher : CRC Press
Release Date : 2017-03-27
Category : Science
Total pages :1454
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Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.

Electronic Properties of Semiconductor Interfaces

Electronic Properties of Semiconductor Interfaces
Author : Winfried Mönch
Publisher : Springer Science & Business Media
Release Date : 2013-04-17
Category : Technology & Engineering
Total pages :264
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Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

The MOS System

The MOS System
Author : Olof Engström
Publisher : Cambridge University Press
Release Date : 2014-09-25
Category : Technology & Engineering
Total pages :129
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This detailed and up-to-date guide to modern MOS structures describes important tools, cutting-edge models, novel phenomena and current challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces the ideal MOS system, physical and electrical properties of high-k oxides, their dielectric constants, and energy offsets to semiconductors and metals, before moving on to electrical and physical characterization methods for high-k dielectric materials. Finally, real MOS systems are introduced: high-k dielectrics and interlayers, the influence of phonon dynamics, interface states and bulk traps, effective metal work functions, gate leakage phenomena and high mobility channel materials. Abstract concepts are supported by practical examples and critical comparison, encouraging an intuitive understanding of the principles at work, and presented alongside recent theoretical and experimental results, making this the ideal companion for researchers, graduate students and industrial development engineers working in nanoelectronics.

Transparent Conductive Zinc Oxide

Transparent Conductive Zinc Oxide
Author : Klaus Ellmer,Andreas Klein,Bernd Rech
Publisher : Springer Science & Business Media
Release Date : 2007-12-29
Category : Technology & Engineering
Total pages :446
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Zinc oxide (ZnO) belongs to the class of transparent conducting oxides that can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review.

JJAP

JJAP
Author : Anonim
Publisher : Unknown
Release Date : 2008
Category : Physics
Total pages :129
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Photoelectron Spectroscopy

Photoelectron Spectroscopy
Author : J. H. D. Eland
Publisher : Elsevier
Release Date : 2013-10-22
Category : Science
Total pages :286
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Photoelectron Spectroscopy: An Introduction to Ultraviolet Photoelectronspectroscopy in the Gas Phase, Second Edition Photoelectron Spectroscopy: An Introduction to Ultraviolet PhotoelectronSpectroscopy in the Gas Phase, Second Edition aims to give practical approach on the subject of photoelectron spectroscopy, as well as provide knowledge on the interpretation of the photoelectron spectrum. The book covers topics such as the principles and literature of photoelectron microscopy; the main features and analysis of photoelectron spectra; ionization techniques; and energies from the photoelectron spectra. Also covered in the book are topics suc as photoelectron band structure and the applications of photoelectron spectroscopy in chemistry. The text is recommended for students and practitioners of chemistry who would like to be familiarized with the concepts of photoelectron spectroscopy and its importance in the field.

Characterization in Compound Semiconductor Processing

Characterization in Compound Semiconductor Processing
Author : Yale Strausser
Publisher : Unknown
Release Date : 1995
Category : Compound semiconductors
Total pages :199
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The book will have two major sections, one on Si based systems and the other on compound semiconductor systems. Although there are many materials common to both technologies, the applications, processing, and problems seen, are different enough to warrant this separation. In the silicon section there will be a chapter on semiconducting layers, such as epi SI, SOI layers, Si Ge films, etc., discussing the techniques used in problem-solving in these films. In the area of conducting films there will be chapters of doped poly Si, silicides and polycides, Al- and/or Cu-cased films, W-based films and one on barrier materials. Each of these systems is sufficiently different to benefit from a different author and a separate discussion of the types of problems encountered. This section will then be completed by a chapter or dielectric films. Even though there are a number of different applications for dielectrics, i.e. passivation films, intermetal dielectrics, gate oxides, field oxides, ad

Physics Briefs

Physics Briefs
Author : Anonim
Publisher : Unknown
Release Date : 1992
Category : Physics
Total pages :129
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Turkish Journal of Physics

Turkish Journal of Physics
Author : Anonim
Publisher : Unknown
Release Date : 2000
Category : Physics
Total pages :129
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Basic Properties of Semiconductors

Basic Properties of Semiconductors
Author : Peter Theodore Landsberg
Publisher : North Holland
Release Date : 1992
Category : Science
Total pages :1204
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Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the next two analyze impurities in semiconductors. Then follow chapters on semiconductor statistics and on surfaces, interfaces and band offsets as they occur in heterojunctions. Chapters 8 to 19 report on newer topics (though a survey of transport properties of carriers is also included). Among these are transport of hot electrons, and thermoelectric effects including here and elsewhere properties of low-dimensional and mesoscopic structures. The electron-hole liquid, the quantum Hall effect, localisation, ballistic transport, coherence in superlattices, current ideas on tunnelling and on quantum confinement and scattering processes are also covered.

Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing

Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing
Author : D. Misra
Publisher : The Electrochemical Society
Release Date : 2008-01-01
Category : Dielectrics
Total pages :405
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This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectronics have reached below 100 nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy sources, and various types of sensing devices. As long as one or more of these functional devices is in 1-100 nm dimensions, the resultant system can be defined as nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addition to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.

Japanese Journal of Applied Physics

Japanese Journal of Applied Physics
Author : Anonim
Publisher : Unknown
Release Date : 2001
Category : Physics
Total pages :129
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