November 30, 2020

Download Ebook Free The IGBT Device

The IGBT Device

The IGBT Device
Author : B. Jayant Baliga
Publisher : William Andrew
Release Date : 2015-03-06
Category : Technology & Engineering
Total pages :732
GET BOOK

The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.

Insulated Gate Bipolar Transistor IGBT Theory and Design

Insulated Gate Bipolar Transistor IGBT Theory and Design
Author : Vinod Kumar Khanna
Publisher : John Wiley & Sons
Release Date : 2004-04-05
Category : Technology & Engineering
Total pages :648
GET BOOK

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Fundamentals of Power Semiconductor Devices

Fundamentals of Power Semiconductor Devices
Author : B. Jayant Baliga
Publisher : Springer Science & Business Media
Release Date : 2010-04-02
Category : Technology & Engineering
Total pages :1069
GET BOOK

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices
Author : B. Jayant Baliga
Publisher : Woodhead Publishing
Release Date : 2018-10-17
Category : Technology & Engineering
Total pages :418
GET BOOK

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Power Microelectronics: Device And Process Technologies (Second Edition)

Power Microelectronics: Device And Process Technologies (Second Edition)
Author : Yung Chii Liang,Ganesh S Samudra,Chih-fang Huang
Publisher : World Scientific
Release Date : 2017-03-14
Category : Technology & Engineering
Total pages :608
GET BOOK

'This is an excellent reference book for graduates or undergraduates studying semiconductor technology, or for working professionals who need a reference for detailed theory and working knowledge of processes in the field of power semiconductor devices.'IEEE Electrical Insulation MagazineThis descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects.

Advanced High Voltage Power Device Concepts

Advanced High Voltage Power Device Concepts
Author : B. Jayant Baliga
Publisher : Springer Science & Business Media
Release Date : 2011-09-21
Category : Technology & Engineering
Total pages :568
GET BOOK

The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.

Power Semiconductors

Power Semiconductors
Author : Stefan Linder
Publisher : EPFL Press
Release Date : 2006-06-02
Category : Technology & Engineering
Total pages :267
GET BOOK

The aim of this book is to provide an overview of the various types of power semiconductor devices, to give an insight into how they function, and to explain and analyze the characteristics of the various components. All the important classes of power semiconductors are covered. Of particular interest, the author takes into account the role of plasma formation in the operation of highpower semiconductor devices.

Semiconductor Power Devices

Semiconductor Power Devices
Author : Josef Lutz,Heinrich Schlangenotto,Uwe Scheuermann,Rik De Doncker
Publisher : Springer
Release Date : 2019-06-04
Category : Technology & Engineering
Total pages :714
GET BOOK

Halbleiter-Leistungsbauelemente sind das Kernstück der Leistungselektronik. Sie bestimmen die Leistungsfähigkeit und machen neuartige und verlustarme Schaltungen erst möglich. In dem Band wird neben den Halbleiter-Leistungsbauelementen selbst auch die Aufbau- und Verbindungstechnik behandelt: von den physikalischen Grundlagen und der Herstellungstechnologie über einzelne Bauelemente bis zu thermomechanischen Problemen, Zerstörungsmechanismen und Störungseffekten. Die 2., überarbeitete Auflage berücksichtigt technische Neuerungen und Entwicklungen.

Power Electronics Semiconductor Devices

Power Electronics Semiconductor Devices
Author : Robert Perret
Publisher : John Wiley & Sons
Release Date : 2013-03-01
Category : Technology & Engineering
Total pages :576
GET BOOK

This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.

Silicon Carbide Power Devices

Silicon Carbide Power Devices
Author : B Jayant Baliga
Publisher : World Scientific
Release Date : 2006-01-05
Category : Technology
Total pages :528
GET BOOK

Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications
Author : Yogesh Kumar Sharma
Publisher : BoD – Books on Demand
Release Date : 2018-09-12
Category : Technology & Engineering
Total pages :152
GET BOOK

SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

High Voltage Direct Current Transmission

High Voltage Direct Current Transmission
Author : Dragan Jovcic
Publisher : John Wiley & Sons
Release Date : 2019-07-01
Category : Technology & Engineering
Total pages :560
GET BOOK

Presents the latest developments in switchgear and DC/DC converters for DC grids, and includes substantially expanded material on MMC HVDC This newly updated edition covers all HVDC transmission technologies including Line Commutated Converter (LCC) HVDC; Voltage Source Converter (VSC) HVDC, and the latest VSC HVDC based on Modular Multilevel Converters (MMC), as well as the principles of building DC transmission grids. Featuring new material throughout, High Voltage Direct Current Transmission: Converters, Systems and DC Grids, 2nd Edition offers several new chapters/sections including one on the newest MMC converters. It also provides extended coverage of switchgear, DC grid protection and DC/DC converters following the latest developments on the market and in research projects. All three HVDC technologies are studied in a wide range of topics, including: the basic converter operating principles; calculation of losses; system modelling, including dynamic modelling; system control; HVDC protection, including AC and DC fault studies; and integration with AC systems and fundamental frequency analysis. The text includes: A chapter dedicated to hybrid and mechanical DC circuit breakers Half bridge and full bridge MMC: modelling, control, start-up and fault management A chapter dedicated to unbalanced operation and control of MMC HVDC The advancement of protection methods for DC grids Wideband and high-order modeling of DC cables Novel treatment of topics not found in similar books, including SimPowerSystems models and examples for all HVDC topologies hosted by the 1st edition companion site. High Voltage Direct Current Transmission: Converters, Systems and DC Grids, 2nd Edition serves as an ideal textbook for a graduate-level course or a professional development course.

Advanced High Voltage Power Device Concepts

Advanced High Voltage Power Device Concepts
Author : B. Jayant Baliga
Publisher : Springer Science & Business Media
Release Date : 2011-09-21
Category : Technology & Engineering
Total pages :568
GET BOOK

The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.

Power Devices for Efficient Energy Conversion

Power Devices for Efficient Energy Conversion
Author : Gourab Majumdar,Ikunori Takata
Publisher : CRC Press
Release Date : 2018-04-17
Category : Science
Total pages :336
GET BOOK

The growth of power electronics, centering on inverters and converters as its key system topology, has accelerated recently due to the demand for efficient power conversion. This growth has also been backed up by several evolutionary changes and breakthroughs achieved in the areas of power semiconductor device physics, process technology, and design. However, as power semiconductor technology remains a highly specialized subject, the literature on further research, development, and design in related fields is not adequate. With this in view, two specialists of power semiconductors, well known for their research and contributions to the field, compiled this book as a review volume focusing on power chip and module technologies. The prime purpose is to help researchers, academia, and engineers, engaged in areas related to power devices and power electronics, better understand the evolutionary growth of major power device components, their operating principles, design aspects, application features, and trends. The book is filled with unique topics related to power semiconductors, including tips on state-of-the-art and futuristic-oriented applications. Numerous diagrams, illustrations, and graphics are included to adequately support the content and to make the book extremely attractive as a practical and user-friendly reference book for researchers, technologists, and engineers, as well as a textbook for advanced graduate-level and postgraduate students.

Simulation of Semiconductor Devices and Processes

Simulation of Semiconductor Devices and Processes
Author : Siegfried Selberherr,Hannes Stippel,Ernst Strasser
Publisher : Springer Science & Business Media
Release Date : 2012-12-06
Category : Computers
Total pages :507
GET BOOK

The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.