January 18, 2021

Download Ebook Free Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices
Author : B. Jayant Baliga
Publisher : Woodhead Publishing
Release Date : 2018-10-17
Category : Technology & Engineering
Total pages :418
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Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Wide Bandgap Semiconductor Electronics And Devices

Wide Bandgap Semiconductor Electronics And Devices
Author : Singisetti Uttam,Razzak Towhidur,Zhang Yuewei
Publisher : World Scientific
Release Date : 2019-12-10
Category : Technology & Engineering
Total pages :260
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With the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.

Characterization of Wide Bandgap Power Semiconductor Devices

Characterization of Wide Bandgap Power Semiconductor Devices
Author : Fei Wang,Zheyu Zhang,Edward A. Jones
Publisher : Institution of Engineering and Technology
Release Date : 2018-11-10
Category : Technology & Engineering
Total pages :347
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Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization. It provides essential tools to assist researchers, advanced students and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications, and includes examples of applying the described methodology.

Wide Bandgap Power Semiconductor Packaging

Wide Bandgap Power Semiconductor Packaging
Author : Katsuaki Suganuma
Publisher : Woodhead Publishing
Release Date : 2018-05-28
Category : Technology & Engineering
Total pages :240
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Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance Provides the latest research on potential solutions, with an eye towards the end goal of system integration Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications
Author : Yogesh Kumar Sharma
Publisher : BoD – Books on Demand
Release Date : 2018-09-12
Category : Technology & Engineering
Total pages :152
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SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

Ultra-wide Bandgap Semiconductor Materials

Ultra-wide Bandgap Semiconductor Materials
Author : Meiyong Liao,Bo Shen,Zhanguo Wang
Publisher : Elsevier
Release Date : 2019-06-18
Category : Technology & Engineering
Total pages :503
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Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

Wide Bandgap Semiconductor Based Micro/Nano Devices

Wide Bandgap Semiconductor Based Micro/Nano Devices
Author : Jung-Hun Seo
Publisher : MDPI
Release Date : 2019-04-25
Category : Technology & Engineering
Total pages :138
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While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.

Wide Bandgap Semiconductors

Wide Bandgap Semiconductors
Author : Kiyoshi Takahashi,Akihiko Yoshikawa,Adarsh Sandhu
Publisher : Springer Science & Business Media
Release Date : 2007-04-12
Category : Technology & Engineering
Total pages :460
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This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Author : Yue Hao,Jin Feng Zhang,Jin Cheng Zhang
Publisher : CRC Press
Release Date : 2016-11-03
Category : Science
Total pages :368
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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Gallium Nitride and Silicon Carbide Power Devices

Gallium Nitride and Silicon Carbide Power Devices
Author : B Jayant Baliga
Publisher : World Scientific Publishing Company
Release Date : 2016-12-12
Category :
Total pages :592
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During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities. Request Inspection Copy

Wide Energy Bandgap Electronic Devices

Wide Energy Bandgap Electronic Devices
Author : Fan Ren,J. C. Zolper
Publisher : World Scientific
Release Date : 2003
Category : Technology & Engineering
Total pages :514
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Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.

Modeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco© Atlas

Modeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco© Atlas
Author : Pushpakaran Bejoy N,Bayne Stephen B
Publisher : World Scientific
Release Date : 2019-03-25
Category : Technology & Engineering
Total pages :464
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The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.

Wide-bandgap Semiconductors for Next-generation Power Electronics Systems

Wide-bandgap Semiconductors for Next-generation Power Electronics Systems
Author : Grayson Zulauf
Publisher : Unknown
Release Date : 2020
Category :
Total pages :129
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Wide-bandgap power semiconductors promise to reshape the power electronics landscape, opening completely new use cases and increasing efficiency and power density in existing ones. Most notably, gallium nitride (GaN) and silicon carbide (SiC) were successfully commercialized in the past decades, with theoretical benefits over silicon of multiple orders-of-magnitude. When combined with soft-switching techniques and topologies, these wide-bandgap materials have the potential to move power conversion to MHz operating frequencies, radically shrinking power converters and enabling new fabrication methods with the frequency-driven reduction of passive component requirements. Unfortunately, soft-switched converters built at MHz frequencies have consistently underperformed their modeled efficiency, as this work shows for three DC-RF inverters at high- and very-high-frequency. These inverters have measured semiconductor losses nearly an order-of-magnitude greater than expected from manufacturer-provided simulation models, a discrepancy that demands investigation. These losses are attributed to the process of resonantly charging and discharging the output capacitance (Coss) of the power semiconductors, a loss mechanism termed "soft-switching losses" or "Coss losses." Our measurements constitute the first recognition of this problem in GaN HEMTs, and these initial measurements are then extended to SiC and Si MOSFETs, finding dependencies and scaling laws for each device class. To complete the understanding of losses at high-frequencies, the well-understood phenomenon in GaN HEMTs of dynamic on-resistance is then revisited. Our work conclusively shows that dynamic on-resistance cannot be accurately characterized using the standardized double-pulse-test, and uses the underlying physics to determine the parameters that must be controlled for accurate reporting. Using this measurement framework, this work extends the dynamic on-resistance measurements to MHz frequencies for the first time, finding that the majority of the dynamic effects in soft-switched converters occur below 1 MHz for the tested device. With both off-state and on-state losses precisely understood at MHz frequencies, the promise of high-frequency power conversion can finally be realized. While adopted widely in cell phones, inductive wireless power transfer for higher-value applications (e.g. electric vehicles) is beset by both low performance and high cost due to the limitations of litz wire. At 6.78 MHz, the first international industrial, scientific, and medical (ISM) band above 200 kHz, litz wire can be completely eliminated, paving the way to low cost, small, light, and high-performance systems. A 1 kW DC-DC converter that transfers power across a 2 cm gap with 6.6 cm diameter coils at over 95% efficiency is demonstrated, a new benchmark in power density and efficiency for MHz-frequency wireless power transfer. This performance would, plainly, not have been possible without the identification and quantification of Coss losses. Our future power, transportation, and computing infrastructures are dependent on the implementation of wide-bandgap power semiconductors to reduce size, weight, and cost while increasing efficiency to address the climate challenge. This thesis is our small contribution to meaningfully improving these semiconductors and showing what's possible for the next generation of power conversion.

Topics in Growth and Device Processing of III-V Semiconductors

Topics in Growth and Device Processing of III-V Semiconductors
Author : S. J. Pearton,C. R. Abernathy,F. Ren
Publisher : World Scientific
Release Date : 1996
Category : Technology & Engineering
Total pages :546
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This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

Wide Bandgap Semiconductor Materials and Devices 16

Wide Bandgap Semiconductor Materials and Devices 16
Author : S. Jang,K. Shenai,G. W. Hunter,F. Ren,C. O’Dwyer,K. Mishra
Publisher : The Electrochemical Society
Release Date : 2015
Category :
Total pages :335
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