June 19, 2021

Download Ebook Free Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices
Author : B. Jayant Baliga
Publisher : Woodhead Publishing
Release Date : 2018-10-17
Category : Technology & Engineering
Total pages :418
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Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Wide Bandgap Semiconductor Electronics And Devices

Wide Bandgap Semiconductor Electronics And Devices
Author : Singisetti Uttam,Razzak Towhidur,Zhang Yuewei
Publisher : World Scientific
Release Date : 2019-12-10
Category : Technology & Engineering
Total pages :260
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With the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.

Wide Bandgap Semiconductors

Wide Bandgap Semiconductors
Author : Kiyoshi Takahashi,Akihiko Yoshikawa,Adarsh Sandhu
Publisher : Springer Science & Business Media
Release Date : 2007-04-12
Category : Technology & Engineering
Total pages :460
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This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

Characterization and Implementation of Wide-bandgap Semiconductor Power Devices

Characterization and Implementation of Wide-bandgap Semiconductor Power Devices
Author : Yuru Wang
Publisher : Unknown
Release Date : 2020
Category :
Total pages :127
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Ultra-wide Bandgap Semiconductor Materials

Ultra-wide Bandgap Semiconductor Materials
Author : Meiyong Liao,Bo Shen,Zhanguo Wang
Publisher : Elsevier
Release Date : 2019-06-18
Category : Technology & Engineering
Total pages :503
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Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

Characterization of Wide Bandgap Power Semiconductor Devices

Characterization of Wide Bandgap Power Semiconductor Devices
Author : Fei Wang,Zheyu Zhang,Edward A. Jones
Publisher : Institution of Engineering and Technology
Release Date : 2018
Category : Technology & Engineering
Total pages :347
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At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection. Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.

Wide Bandgap Semiconductors for Power Electronics

Wide Bandgap Semiconductors for Power Electronics
Author : Peter Wellmann,Noboru Ohtani,Roland Rupp
Publisher : Wiley-VCH
Release Date : 2021-06-08
Category : Technology & Engineering
Total pages :715
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A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage to the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of the wide bandgap semiconductor with the technologic implementation capabilities Offers a unique combination academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.

On the Perspectives of Wide-Band Gap Power Devices in Electronic-Based Power Conversion for Renewable Systems

On the Perspectives of Wide-Band Gap Power Devices in Electronic-Based Power Conversion for Renewable Systems
Author : Samuel Vasconcelos Araújo
Publisher : kassel university press GmbH
Release Date : 2013-06-13
Category : Semiconductors
Total pages :236
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Wide Bandgap Semiconductor Based Micro/Nano Devices

Wide Bandgap Semiconductor Based Micro/Nano Devices
Author : Jung-Hun Seo
Publisher : MDPI
Release Date : 2019-04-25
Category : Technology & Engineering
Total pages :138
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While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.

Wide Bandgap Semiconductor Devices for Switching and Microwave Power Applications

Wide Bandgap Semiconductor Devices for Switching and Microwave Power Applications
Author : Roberto Pierobon
Publisher : Unknown
Release Date : 2003
Category :
Total pages :92
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Wide Bandgap Semiconductor Materials and Devices 16

Wide Bandgap Semiconductor Materials and Devices 16
Author : S. Jang,K. Shenai,G. W. Hunter,F. Ren,C. O’Dwyer,K. Mishra
Publisher : The Electrochemical Society
Release Date : 2015
Category :
Total pages :335
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Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications
Author : Yogesh Kumar Sharma
Publisher : BoD – Books on Demand
Release Date : 2018-09-12
Category : Technology & Engineering
Total pages :152
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SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

Technical Report: Workshop on Defects in Wide Bandgap (WBG) Semiconductor Power Switching Devices

Technical Report: Workshop on Defects in Wide Bandgap (WBG) Semiconductor Power Switching Devices
Author : Aristos Christou,Manijeh Razeghi,Krishna Shenai
Publisher : Unknown
Release Date : 2014-12-05
Category :
Total pages :129
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A white paper based on topics discussed at the Workshop on Defects in Wide Band Gap Semiconductors, held in College Park, MD, in September 2014.

Channel Engineering of Wide Bandgap Semiconductor Based Power Devices

Channel Engineering of Wide Bandgap Semiconductor Based Power Devices
Author : Jin Wei
Publisher : Unknown
Release Date : 2017
Category :
Total pages :141
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Power Electronics Device Applications of Diamond Semiconductors

Power Electronics Device Applications of Diamond Semiconductors
Author : Satoshi Koizumi,Hitoshi Umezawa,Julien Pernot,Mariko Suzuki
Publisher : Woodhead Publishing
Release Date : 2018-06-29
Category : Technology & Engineering
Total pages :466
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Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance Examines why diamond semiconductors could lead to superior power electronics Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics